? 2006 ixys corporation all rights reserved symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a55v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 5 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 25 a, note 1 3.4 4.4 m trenchmv tm power mosfet (electrically isolated back surface) preliminary technical information n-channel enhancement mode avalanche rated IXTC220N055T v dss =55 v i d25 = 130 a r ds(on) 4.4 m ds99674(11/06) symbol test conditions maximum ratings v dss t j = 25 c to 175 c55v v dgr t j = 25 c to 175 c; r gs = 1 m 55 v v gsm transient 20 v i d25 t c = 25 c 130 a i lrms package current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 600 a i ar t c = 25 c25a e as t c = 25 c 500 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 5 p d t c = 25 c 150 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c v isol 50/60 hz, t = 1 minute, i isol < 1 ma, rms 2500 v f c mounting force 11..65/2.5..15 n/lb. weight 2g g = gate d = drain s = source g d s isoplus220 (ixtc) e153432 isolated back surface features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - high side switch - 12v battery - abs systems dc/dc converters and off-line ups primary- side switch high current switching applications
ixys reserves the right to change limits, test conditions, and dimensions. IXTC220N055T notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. drain and source kelvin contacts must be located less than 5 mm from the plastic body. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v, i d = 60 a, note 1 75 120 s c iss 7200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1270 pf c rss 285 pf t d(on) 36 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 62 ns t d(off) r g = 5 (external) 53 ns t f 53 ns q g(on) 158 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 42 nc q gd 46 nc r thjc 1.0 c/w r thcs 0.25 c/w source-drain diode characteristic values t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 220 a i sm pulse width limited by t jm 600 a v sd i f = 25 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s30ns v r = 30 v, v gs = 0 v note: bottom heatsink (pin 4) is electrically isolated from pins 1,2, and 3. 1.gate 2. drain 3.sourc e isoplus220 (ixtc) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2006 ixys corporation all rights reserved IXTC220N055T fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 220 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v 5v fig. 2. extended output characteristics @ 25oc 0 40 80 120 160 200 240 280 320 00.511.522.533.544.5 v ds - volts i d - amperes v gs = 10v 9v 8v 5v 7v 6v fig. 3. output characteristics @ 150oc 0 20 40 60 80 100 120 140 160 180 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 110a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 220a i d = 110a fig. 5. r ds(on) normalized to i d = 110a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 40 80 120 160 200 240 280 320 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXTC220N055T fig. 7. input admittance 0 30 60 90 120 150 180 210 240 270 3.5 4 4.5 5 5.5 6 6.5 v gs - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 0 30 60 90 120 150 180 210 240 270 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 300 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v gs - volts v ds = 27.5v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2006 ixys corporation all rights reserved fig. 14. resistive turn-on rise time vs. drain current 25 30 35 40 45 50 55 60 65 70 75 25 30 35 40 45 50 i d - amperes t r - nanosecond s r g = 5 v gs = 10v v ds = 30v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 4 6 8 10 12 14 16 18 20 r g - ohms t r - nanoseconds 30 35 40 45 50 55 60 65 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 30v i d = 50a, 25a fig. 16. resistive turn-off switch- ing times vs. junction temperature 45 47 49 51 53 55 57 59 61 63 65 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanosecond s 50 54 58 62 66 70 74 78 82 86 90 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 5 , v gs = 10v v ds = 30v i d = 25a, 50a i d = 50a, 25a fig. 17. resistive turn-off switching times vs. drain current 46 48 50 52 54 56 58 60 62 64 24 28 32 36 40 44 48 i d - amperes t f - nanoseconds 48 52 56 60 64 68 72 76 80 84 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 , v gs = 10v v ds = 30v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 20 25 30 35 40 45 50 55 60 65 70 75 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanosecond s r g = 5 v gs = 10v v ds = 30v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 50 70 90 110 130 150 170 190 4 6 8 101214161820 r g - ohms t f - nanoseconds 50 80 110 140 170 200 230 260 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 30v i d = 50a i d = 25a IXTC220N055T ixys ref: t_220n055t(5v) 8-29-06-a.xls
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